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DDMOSFET

DUAL DIELECTRIC MOSFET

Brief Description

The device is developed to sense heavy radiation basing on following principles:

Use of a Thick Dual Dielectric Si3N4 on SiO2 as gate of the p- MOSFET

When the device under bias is exposed to radiation the charge carriers generated in dielectric (SiO2) layer are swept to the Nitride/ Oxide interface

This causes a shift in the threshold voltage of the MOSFET

With the help of suitable electronics the radiation dose can directly be read

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Specifications
  • System Function: Radiation Sensor with detection range from 1cGy to 1000cGy
  • Dielectric : Dual SiO2 & Si3N4
  • Gate Electrode : Poly/ Metal
  • Gate :
    • Dielectric Thickness (SiO2) : 0.7 to 1.1 microns
    • Si3N4 above SiO2 : 0.3 to 0.5 microns
  • Channel Length : 3, 7 and 15 microns
  • Threshold Voltage : To bring to 2 to 5V
  • Die Size : about 2.7 mm x 5.2 mm
  • Package : 16 pin SO Package
  • Application: Heavy Radiation Sensing

Contacts

Semiconductor Technology and Applied Research Centre
(A unit of SITAR -Govt. of INDIA)
PO Box No.1640, off Old Madras Road,
Doorvani Nagar P.O.,
Bangalore 560 016, India.


Phone: 91 80 25653588
Fax: 91 80 25653590
Email: mail@sitarindia.com
URL: www.sitar.org.in