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Products

PRESSURE SENSOR

Brief Description

Piezoresistive Pressure Sensor in a Whetstone bridge configuration

Piezoresistors realized by selectively doping (P type) the diaphragm

When pressure applied to the diaphragm it undergoes deflection inducing stress at the diaphragm edges

Due to this the Whetstone bridge becomes unbalanced

This is transduced into voltage and read by ROIC.


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Specifications
  • Pressure Range : 0-50Bar
  • Sensitivity: >6.3mV/bar
  • Linearity: >95%
  • Burst Pressure: >5 times the pressure range
  • Resonance Frequency: >1MHz

Contacts

Semiconductor Technology and Applied Research Centre
(A unit of SITAR -Govt. of INDIA)
PO Box No.1640, off Old Madras Road,
Doorvani Nagar P.O.,
Bangalore 560 016, India.


Phone: 91 80 25653588
Fax: 91 80 25653590
Email: mail@sitarindia.com
URL: www.sitar.org.in