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SiPm

SILICON PHOTO MULTIPLIER

Brief Description

The device is designed by BARC for image sensing applications based on array of micro-cell Avalanche Photo Diode (APD) structures made of shallow p/n junction with an Anti Reflective Oxide coating operating in limited Geiger mode

When the device under reverse-bias is exposed to light, the charge carriers generated in p-n junction trigger avalanche breakdown leading to high current output.

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Specifications
  • Geometry: 1x1 mm2, 3x3 mm2
  • Pixel size: 20-30u
  • Gain: 105 – 106
  • Dark counts: <100kHz/mm2
  • Rise Time: <10ns
  • Poly Si resistor in series with pixel: 300Kohm
  • Spectral Response optimization: 450-550 nm
  • Die Size : about 1mm x 1mm to 3mm x 3m
  • Application : Image Sensing

Contacts

Semiconductor Technology and Applied Research Centre
(A unit of SITAR -Govt. of INDIA)
PO Box No.1640, off Old Madras Road,
Doorvani Nagar P.O.,
Bangalore 560 016, India.


Phone: 91 80 25653588
Fax: 91 80 25653590
Email: mail@sitarindia.com
URL: www.sitar.org.in